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| SHINDENGEN General Purpose Rectifiers SMT Bridges S1WB(A)60B 600V 1A FEATURES *oe Small SMT *oe High IFSM *oe Applicable to Automatic Insertion APPLICATION power supply *oe Home Appliances, Office Equipment *oe Telecommunication, Factory Automation *oe Switching OUTLINE DIMENSIONS Case : 1W1W Case : Unit : mm RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Operating Junction Temperature Tj 150 *Z VRM Maximum Reverse Voltage 600 V Average Rectified Forward Current 50Hz sine wave, R-load, Ta=25*Z IO 1 A Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z 50 A Current Squared Time I2 t 1ms*...t*10ms*@Tj=25*Z 16 A2s *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Forward Voltage VF I =0.5A, Pulse measurement, Rating of per diode Max.1.0 V F Reverse Current IR V=V , Pulse measurement, Rating of per diode R RM Max.10 EA Thermal Resistance AEjl junction to lead Max.10 *Z/W AEja junction to ambient Max.65 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S1WB(A)60B 10 Forward Voltage Forward Current IF [A] 1 Tl=150C [TYP] Tl=25C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] S1WB(A)60B 4 3.5 Forward Power Dissipation Forward Power Dissipation PF [W] 3 2.5 2 1.5 1 0.5 0 SIN 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Average Rectified Forward Current IO [A] Tj = 150C Sine wave S1WB(A)60B 1.4 Derating Curve PCB Average Rectified Forward Current IO [A] 1.2 SIN 1 Glass-epoxy substrate Soldering land 3mm 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = VRM Sine wave R-load Free in air S1WB(A)60B 80 Peak Surge Forward Capability IFSM 70 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 60 non-repetitive, sine wave, Tj=25C before surge current is applied 50 40 30 20 10 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
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